Samsung Electronics has started mass production of its HBM4 memory and shipped commercial units to customers, marking an industry first for this generation of high bandwidth memory.
HBM4 delivers a consistent transfer speed of 11.7 Gbps with capability up to 13 Gbps. This is about 46 percent higher than the 8 Gbps industry standard and 1.22 times faster than the previous HBM3E maximum of 9.6 Gbps. Total bandwidth per stack reaches up to 3.3 TB per second, 2.7 times higher than HBM3E.
Built using Samsung’s 1c DRAM process and a 4nm logic base die, HBM4 supports 12 layer stacking with capacities from 24GB to 36GB. A future 16 layer version will scale up to 48GB.
The company says HBM4 improves power efficiency by 40% and enhances heat dissipation by 30% compared to HBM3E. Samsung expects HBM sales to more than triple in 2026 and plans to expand production, with HBM4E sampling expected in the second half of 2026.
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