Toshiba Electronic Devices & Storage Corporation has launched the TPH2R70AR5, a 100V N-channel power MOSFET built with its latest U-MOS11-H process technology. Targeting industrial applications such as switched-mode power supplies for data centers and communications base stations, the device offers improved efficiency, higher power density, and reduced energy loss.
Compared to the previous U-MOSX-H generation, the TPH2R70AR5 delivers approximately 8% lower drain-source On-resistance (RDS(ON)), 37% lower total gate charge (Qg), and a 42% improvement in the RDS(ON)×Qg trade-off, minimizing both conduction and switching losses. It also achieves high-speed body diode performance through lifetime control technology, reducing reverse recovery charge (Qrr) by 38% and improving RDS(ON)×Qrr by 43%. These characteristics enable highly efficient power supply systems with lower energy consumption.
The device comes in a SOP Advance (N) package, ensuring excellent mounting compatibility. Toshiba also provides circuit design support through its G0 SPICE and G2 SPICE models, enabling fast and accurate circuit verification. The TPH2R70AR5 represents Toshiba’s ongoing commitment to expanding its lineup of low-loss MOSFETs, helping industrial equipment manufacturers improve efficiency and reduce operational costs in modern power supply applications.
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