Toshiba Electronic Devices & Storage Corporation and SICC Co., Ltd. have signed a memorandum of understanding to explore collaboration on silicon carbide (SiC) power semiconductor wafers. The partnership will focus on improving wafer quality and expanding stable supply from SICC to Toshiba, aiming to support the growing demand for efficient and reliable power semiconductors.
SiC wafers are crucial in high-temperature environments such as electric vehicles and renewable energy systems, where both efficiency and reliability are essential. Toshiba already produces SiC devices for railways and is developing them for automotive and server power supply applications. Collaboration with SICC, a leader in SiC wafer technology, is expected to help Toshiba reduce power losses and enhance device performance in next-generation applications.
SICC, founded in 2010, has specialized in single-crystal SiC wafers and holds a strong global patent position. It introduced the world’s first 12-inch SiC wafer in 2024 and expanded its portfolio in 2025. Through this collaboration, SICC will align its wafer technology with manufacturers’ needs while supporting market growth. Both companies will continue discussions to finalize joint initiatives under the MOU.
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